Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorHiroyuki Matsuura
Life of this patent
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Abstract
The plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and places a plurality of substrates in multiple tiers, a rotation shaft that rotates the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhauster that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container to face each other across a center of the processing container, and a radio-frequency power supply that applies radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container.
Claims13
A plasma processing apparatus comprising:
- a processing container;
- a substrate holder inserted into the processing container and configured to place a plurality of substrates in multiple tiers;
- a rotation shaft configured to rotate the substrate holder inside the processing container;
- a gas supply pipe configured to supply a processing gas into the processing container;
- an exhauster configured to evacuate an inside of the processing container;
- a pair of electrodes formed of flat plates, respectively and arranged outside the processing container to face each other across a center of the processing container;
- and
- a radio-frequency power supply configured to apply radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container,
- wherein the processing container includes a pair of electrode mounts each protruding outwardly from a side wall of the processing container, and the pair of electrodes are provided on the pair of electrode mounts, respectively.
A plasma processing apparatus comprising:
- a processing container;
- a substrate holder inserted into the processing container and configured to place a plurality of substrates in multiple tiers;
- a rotation shaft configured to rotate the substrate holder inside the processing container;
- a gas supply pipe configured to supply a processing gas into the processing container;
- an exhauster configured to evacuate an inside of the processing container;
- a pair of electrodes formed of flat plates, respectively and arranged outside the processing container to face each other across a center of the processing container;
- and
- a radio-frequency power supply configured to apply radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container,
- wherein the pair of electrodes are formed of synthetic quartz glass having an OH group concentration of 200 ppm or more.
A plasma processing apparatus comprising:
- a processing container;
- a substrate holder inserted into the processing container and configured to place a plurality of substrates in multiple tiers;
- a rotation shaft configured to rotate the substrate holder inside the processing container;
- a gas supply pipe configured to supply a processing gas into the processing container;
- an exhauster configured to evacuate an inside of the processing container;
- a pair of electrodes formed of flat plates, respectively and arranged outside the processing container to face each other across a center of the processing container;
- and
- a radio-frequency power supply configured to apply radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container,
- wherein a circumferential length of the processing container that is shielded by the pair of electrodes is equal to or less than ⅓ of an entire circumferential length of the processing container.
Dependencies are inferred from the claim text.