Charged particle beam writing method and charged particle beam writing apparatus
AssigneeNuFlare Technology, Inc.
InventorsHaruyuki Nomura, Takahito Nakayama
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AssigneeNuFlare Technology, Inc.
InventorsHaruyuki Nomura, Takahito Nakayama
Estimating the term…
The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy. A charged particle beam writing method includes virtually dividing a writing region of the substrate so as to have a predetermined mesh size and calculating a pattern density distribution representing an arrangement ratio of the pattern for each mesh region, calculating a dose distribution using the pattern density distribution, calculating an irradiation amount distribution using the pattern density distribution and the dose distribution, calculating a fogging charged particle amount distribution, calculating a charge amount distribution due to direct charge and a charge amount distribution due to fogging charge, calculating a position shift of a writing position based on the charge amount distribution due to direct charge and the charge amount distribution due to fogging charge, correcting an irradiation position using the position shift, and irradiating the corrected irradiation position with the charged particle beam with which a potential of a surface of the substrate becomes higher than a potential of a bottom surface of ae potential regulation member.
A charged particle beam writing method in which a charged particle beam is deflected by a deflector, focusing is performed by an objective lens, and a pattern is written on a substrate on a stage, the charged particle beam writing method comprising:
A charged particle beam writing apparatus that causes a deflector to deflect a charged particle beam, performs focusing using an objective lens, and writes a pattern on a substrate on a stage, the charged particle beam writing apparatus comprising:
Dependencies are inferred from the claim text.