Back to results
US 12,658,397 B2Granted
Photocathode including nanostructures for extended wavelengths
AssigneeL3Harris Technologies, Inc.
InventorsBed Pantha, Jacob J. Becker, Jon D. Burnsed
Life of this patent
Estimating the term…
Abstract
A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.
Claims11
A photocathode epitaxial structure comprising:
- a substrate material;
- a p-type bulk active layer formed on the substrate material;
- and
- a plurality of nanostructures formed between the substrate material and the p-type bulk active layer, positioned within a band bending region,
- wherein the plurality of nanostructures comprise quantum-confined nanostructures including at least one of quantum wells or quantum dots, and wherein a total thickness of the plurality of nanostructures is less than a thickness of the band bending region.
2 more elements
A photocathode comprising:
- an absorber, the absorber comprising:
- a p-type bulk active layer;
- and
- a plurality of nanostructures formed on the p-type bulk active layer;
- and
- wherein the plurality of nanostructures are exposed to a vacuum and are located within a band bending region between the bulk active layer and the vacuum, wherein the plurality of nanostructures are formed between a substrate material and the p-type bulk active layer in an epitaxial structure, and wherein, the plurality of nanostructures are proximate the vacuum.
3 more elements
Dependencies are inferred from the claim text.