Stacked semiconductor device
AssigneeSK hynix Inc.
InventorsJae Hyung Park, Seung Geun Baek, Dong Uk Lee
Life of this patent
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Abstract
A stacked semiconductor device includes at least one upper chip including a plurality of channels each including first and second pseudo-channels; and a plurality of transfer control circuits respectively corresponding to the channels and each configured to output channel commands according to a channel designation signal designating one of the first and second pseudo-channels and a location information signal indicating a location of a corresponding channel of the channels, and transmit first and second data words between the corresponding channel and a lower chip according to the channel commands.
Claims12
A semiconductor device comprising:
- a first stacked chip including first and second interfaces each configured to transfer a data word between an exterior and a second stacked chip, the data word transferred by the first interface being symmetrical, in units of bytes, to the data word transferred by the second interface;
- and
- the second stacked chip including:
- first and second channels corresponding to the respective first and second interfaces, each having first and second pseudo-channels;
- and
- first and second control circuits corresponding to the respective first and second interfaces, each configured to select one of the first and second pseudo-channels according to a channel designation signal indicating one of the first and second pseudo-channels and a location of the corresponding interface, and transfer the data word between the selected pseudo-channel and the corresponding interface.
Dependencies are inferred from the claim text.