Stabilized voltage generation circuit and semiconductor device
AssigneeRohm Co., Ltd.
InventorHiroshi Yoshikawa
Life of this patent
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Abstract
The stabilized voltage generation circuit includes: a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics; and a second voltage generation circuit including a first MOSFET having a gate of a first conductivity type and a second MOSFET having a gate of a second conductivity type different from the first conductivity type and configured to generate a second voltage with negative temperature characteristics based on the difference in gate threshold voltage between the first and second MOSFETs. The output voltage is generated based on the sum voltage of the first and second voltages.
Claims12
A stabilized voltage generation circuit comprising:
- a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics;
- and
- a second voltage generation circuit including
- a first MOSFET having a gate of a first conductivity type, and
- a second MOSFET having a gate of a second conductivity type different from the first conductivity type,
- wherein the second voltage generation circuit is configured to generate a second voltage with negative temperature characteristics based on a difference in gate threshold voltage between the first and second MOSFETs, and
- the stabilized voltage generation circuit is configured to generate an output voltage based on boosting a sum voltage of the first and second voltages by a variable factor;
- and
- an output adjustment circuit including a series circuit of a plurality of resistors provided between an output voltage line to which the output voltage is applied and a ground,
- wherein the sum voltage is applied to a connection node between the plurality of resistors,
- the plurality of resistors include a variable resistor for output adjustment, and
- the factor varies as a resistance value of the variable resistor for output adjustment is varied.
A stabilized voltage generation circuit comprising:
- a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics;
- and
- a second voltage generation circuit including
- a first MOSFET having a gate of a first conductivity type, and
- a second MOSFET having a gate of a second conductivity type different from the first conductivity type,
- wherein the second voltage generation circuit is configured to generate a second voltage with negative temperature characteristics based on a difference in gate threshold voltage between the first and second MOSFETs,
- the stabilized voltage generation circuit generates an output voltage based on a sum voltage of the first and second voltages,
- the first voltage generation circuit generates the first voltage by using two MOSFETs operating with different current densities, and
- the first voltage generation circuit is configured to be capable of adjusting a temperature coefficient of the first voltage by using a variable resistor for temperature coefficient adjustment.
A stabilized voltage generation circuit, comprising:
- a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics;
- a second voltage generation circuit including
- a first MOSFET having a gate of a first conductivity type, and
- a second MOSFET having a gate of a second conductivity type different from the first conductivity type,
- wherein the second voltage generation circuit is configured to generate a second voltage with negative temperature characteristics based on a difference in gate threshold voltage between the first and second MOSFETs;
- a starting circuit;
- and
- a current source circuit configured to supply the starting circuit with a current corresponding to an internal supply voltage,
- wherein the stabilized voltage generation circuit is configured to generate an output voltage based on a sum voltage of the first and second voltages, and
- the starting circuit is configured to start the first and second voltage generation circuits based on a starting voltage corresponding to the current.
Dependencies are inferred from the claim text.