Method of manufacturing semiconductor structure
AssigneeNanya Technology Corporation
InventorCheng-Wei Wang
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Abstract
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes several operations. A substrate including a device region and a scribe line region is provided. A first layer is formed over the substrate. A first photoluminescent layer is formed over the first layer in the scribe line region. The first layer and the first photoluminescent layer are patterned to form a first pattern in the scribe line region. A first patterned mask layer is formed over a second layer. An alignment of the first patterned mask layer and the first pattern is detected. A pattern of the first patterned mask layer is transferred to the second layer to form a second pattern in the scribe line region.
Claims19
A method of manufacturing a semiconductor structure, comprising:
- forming a first pattern over a substrate;
- forming a photoluminescent layer disposed on a top surface of the first pattern;
- forming an intermediate layer formed over and contacted with the photoluminescent layer and the substrate, wherein the photoluminescent layer is disposed between the first pattern and the intermediate layer;
- forming a patterned mask layer on the intermediate layer;
- and
- detecting an alignment of the patterned mask layer with the first pattern.
Dependencies are inferred from the claim text.