Semiconductor arrangement and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChan-Hong Chern
Life of this patent
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Abstract
A semiconductor arrangement is provided and includes a first dielectric layer over an optical device. A first metallization layer is over the first dielectric layer, and a first conductive line is in the first metallization layer. A first conductive via is in the first metallization layer and contacts the first conductive line. A second metallization layer is over the first metallization layer. A second conductive line is in the second metallization layer and contacts the first conductive via at a first interface. A heater is over the optical device and has a lowermost surface below the first interface and an uppermost surface above the first interface.
Claims20
A semiconductor arrangement, comprising:
- an optical device, comprising:
- a first doped region having a first dopant concentration;
- a second doped region having a second dopant concentration greater than the first dopant concentration;
- a third doped region having a third dopant concentration greater than the second dopant concentration, wherein the second doped region is between the first doped region and the third doped region;
- and
- a waveguide laterally adjacent the first doped region, wherein the waveguide comprises a tapered end portion facing away from the first doped region;
- a conductive contact overlying the third doped region, wherein an electrical signal supplied to the conductive contact is configured to activate the optical device to generate an optical signal in the waveguide;
- and
- a heater overlying the waveguide.
A semiconductor arrangement, comprising:
- an optical device, comprising:
- a first doped region having a first dopant concentration;
- a second doped region having a second dopant concentration greater than the first dopant concentration;
- a third doped region having a third dopant concentration greater than the second dopant concentration, wherein the second doped region is between the first doped region and the third doped region;
- and
- a waveguide laterally adjacent the first doped region;
- a conductive contact overlying the third doped region, wherein an electrical signal supplied to the conductive contact is configured to activate the optical device to generate an optical signal in the waveguide;
- a heater overlying the waveguide;
- and
- a first isolation structure between the first doped region and the third doped region, wherein the second doped region underlies the first isolation structure.
A semiconductor arrangement, comprising:
- an optical device, comprising:
- a first doped region having a first dopant concentration;
- a second doped region having a second dopant concentration greater than the first dopant concentration;
- a third doped region having a third dopant concentration greater than the second dopant concentration, wherein the second doped region is between the first doped region and the third doped region;
- and
- a waveguide laterally adjacent the first doped region;
- a conductive contact overlying the third doped region, wherein an electrical signal supplied to the conductive contact is configured to activate the optical device to generate an optical signal in the waveguide;
- and
- a heater overlying the waveguide, wherein the heater is spaced apart from the waveguide by a plurality of dielectric layers and at least one etch stop layer.
Dependencies are inferred from the claim text.