Optoelectronic device

A time-of-flight sensor, comprising, on a same base substrate:

• a light emitter configured to emit light into an image scene;
• a reference sensor configured to detect light emitted by the light emitter;
• and
• a signal reception sensor array separated from the light emitter by an optical barrier;
• wherein the reference sensor comprises a matrix of pixels, each pixel having a first electrode and a second electrode;
• wherein the light emitter is based on semiconductor nanoparticles;
• wherein each of the reference sensor and each sensor of the signal reception sensor array comprises a layer of semiconductor nanoparticles, a hole transport layer, an electron transport layer and electrodes;
• wherein the optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array;
• wherein the signal reception sensor array is configured to detect light reflected by the image scene;
• and
• wherein the first electrodes of the pixels of the reference sensor comprises a partially transparent and conductive layer common to each of the pixels, the second electrodes being insulated from the second electrode of each other pixel of the reference sensor.

A method of using a sensor to measure a time-of-flight, the sensor comprising on a same base substrate a light emitter configured to emit light into an image scene, a reference sensor configured to detect light emitted by the light emitter, and a signal reception sensor array separated from the light emitter by an optical barrier, wherein the signal reception sensor array and the reference sensor each comprise a matrix of pixels, each pixel having a first electrode and a second electrode, wherein the light emitter is based on semiconductor nanoparticles, wherein each of the reference sensor and each sensor of the signal reception sensor array comprises a layer of semiconductor nanoparticles, a hole transport layer, an electron transport layer and electrodes, wherein the optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array, wherein the signal reception sensor array is configured to detect light reflected by the image scene, and wherein the first electrodes of the pixels of the signal reception sensor array and of the reference sensor comprise a partially transparent and conductive layer common to each of the pixels, the second electrodes being insulated from the second electrode of each other pixel of the signal reception sensor array and of the reference sensor, the method comprising:

• applying, by a polarization circuit, a first voltage between the first electrode and the second electrode of the pixels of the reference sensor and applying a second voltage between the first electrode and the second electrode of the pixels of the signal reception sensor;
• and modifying the first voltage as function of a signal output of the reference sensor.

A method of using a sensor to measure a time-of-flight, the sensor comprising on a same base substrate a light emitter configured to emit light into an image scene, a reference sensor configured to detect light emitted by the light emitter, and a signal reception sensor array separated from the light emitter by an optical barrier, wherein the signal reception sensor array and the reference sensor each comprise a matrix of pixels, each pixel having a first electrode and a second electrode, wherein the light emitter is based on semiconductor nanoparticles, wherein each of the reference sensor and each sensor of the signal reception sensor array comprises a layer of semiconductor nanoparticles, a hole transport layer, an electron transport layer and electrodes, wherein

• the optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array, wherein the signal reception sensor array is configured to detect light reflected by the image scene, and wherein the first electrodes of the pixels of the signal reception sensor array and of the reference sensor comprise a partially transparent and conductive layer common to each of the pixels, the second electrodes being insulated from the second electrode of each other pixel of the signal reception sensor array and of the reference sensor, the method comprising:
• applying, by a polarization circuit, a first voltage between the first electrode and the second electrode of the pixels of the reference sensor and applying a second voltage between the first electrode and the second electrode of the pixels of the signal reception sensor;
• and
• modifying the second voltage as function of a signal output of the signal reception sensor.