Substrate processing method and substrate processing apparatus
AssigneeSCREEN Holdings Co., Ltd.
InventorYuji Yamaguchi
Life of this patent
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Abstract
A substrate processing method of the invention includes: a first step of introducing a processing fluid in a gas phase into a chamber housing a substrate; a second step of changing the processing fluid in the chamber from the gas phase to a supercritical state without intervention of a liquid phase; a third step of changing the processing fluid in the chamber from the supercritical state to a liquid phase; a fourth step of changing the processing fluid in the chamber from the liquid phase to a supercritical state; and a fifth step of changing the processing fluid in the chamber from the supercritical state to a gas phase without intervention of a liquid phase and discharging the processing fluid from the chamber.
Claims11
A substrate processing method for drying a substrate by replacing a liquid adhering to the substrate with a processing fluid in a supercritical state, the substrate processing method comprising:
- introducing the processing fluid in a gas phase into a chamber housing the substrate;
- after introducing the processing fluid in the gas phase into the chamber housing the substrate, changing the processing fluid in the chamber from the gas phase to a supercritical state without intervention of a liquid phase;
- after changing the processing fluid in the chamber from the gas phase to the supercritical state without intervention of the liquid phase, changing the processing fluid in the chamber from the supercritical state to a liquid phase;
- after changing the processing fluid in the chamber from the supercritical state to the liquid phase, changing the processing fluid in the chamber from the liquid phase to the supercritical state;
- and
- after changing the processing fluid in the chamber from the liquid phase to the supercritical state, changing the processing fluid that was changed from the liquid phase to the supercritical state in the chamber from the supercritical state to the gas phase without intervention of a liquid phase and discharging the processing fluid from the chamber.
Dependencies are inferred from the claim text.