In situ and tunable deposition of a film
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hsi Wang, Yen-Yu Chen, Jen-Hao Chien
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Abstract
A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.
Claims20
A physical vapor deposition (PVD) system, comprising:
- a chamber body;
- a first PVD target and a second PVD target, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target being a boron PVD target consisting of boron;
- an X-ray photoelectron spectroscopy (XPS) instrument configured to monitor a boron concentration of a FeCoB film deposited on a substrate disposed, using the first PVD target and the second PVD target simultaneous, in the chamber body;
- and
- a controller configured to determine parameters of the PVD system based on a target boron concentration that is larger than the initial boron concentration, wherein the controller is configured to continuously tune the boron concentration of the FeCoB film by adjusting the parameters of the PVD system when a difference between the boron concentration of the FeCoB film and the target boron concentration is equal to or greater than a threshold.
A physical vapor deposition (PVD) system, comprising:
- a chamber body;
- a substrate support disposed in the chamber body and configured to support a substrate;
- a first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration;
- a second PVD target, wherein the second PVD target is a boron PVD target consisting of boron;
- an X-ray photoelectron spectroscopy (XPS) instrument configured to monitor a boron concentration of a FeCoB film deposited, using the first PVD target and the second PVD target simultaneous, on the substrate;
- and
- a controller configured to determine parameters of the PVD system based on a target boron concentration that is larger than the initial boron concentration, wherein the controller is configured to continuously tune the boron concentration of the FeCoB film by adjusting the parameters of the PVD system based on when a difference between the boron concentration of the FeCoB film and the target boron concentration is equal to or greater than a threshold.
A physical vapor deposition (PVD) system, comprising:
- a chamber body;
- a substrate support disposed in the chamber body and configured to support a substrate;
- a first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration;
- a second PVD target, wherein the second PVD target is a boron PVD target consisting of boron, wherein the first PVD target and the second PVD target are used simultaneously to deposit a FeCoB film on the substrate;
- an X-ray photoelectron spectroscopy (XPS) instrument configured to monitor a boron concentration of the FeCoB film;
- and
- a controller configured to determine parameters of the PVD system based on a target boron concentration that is larger than the initial boron concentration, wherein the controller is configured to continuously tune the boron concentration of the FeCoB film by adjusting the parameters of the PVD system when a difference between the boron concentration of the FeCoB film and the target boron concentration is equal to or greater than a threshold.
Dependencies are inferred from the claim text.