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US 12,655,500 B2Granted
Copper alloy film with high strength and high conductivity
AssigneeApple Inc.
InventorsHerng-Jeng Jou, Jacob L. Smith, Weiming Huang
Life of this patent
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Abstract
A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.
Claims11
An electronic device, comprising:
- a conductive component comprising a metallic alloy including a series of crystal grains, the metallic alloy comprising copper (Cu) and between 0.5-2 at % of one of silver (Ag) or cobalt (Co), wherein:
- at least 90% of the series of crystal grains comprising nanotwin boundaries;
- and
- the crystal grains have an average spacing between nanotwin boundaries of between 2 and 5 nanometers (nm).
1 more element
Dependencies are inferred from the claim text.