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US 12,655,319 B2Granted
Chemical mechanical polishing solution
AssigneeAnji Microelectronics Technology (Shanghai) Co., Ltd.
InventorsXiaoming Ren, Changzheng Jia, Shoutian Li
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Abstract
Disclosed is a chemical mechanical polishing solution containing cerium oxide, polyacrylic acid, polyvinyl amine and water. In this invention polyvinyl amine can serve as an additive to reduce the dishing amount of patterned wafer by negatively charged cerium oxide, and improve the efficiency of planarization.
Claims5
A chemical mechanical polishing solution, consisting of cerium oxide, monomeric acrylic acid, a polyvinyl amine, water, and a pH regulator, wherein:
- a molecular weight of said polyvinyl amine is 1,300 or 2,500;
- when the molecular weight of said polyvinyl amine is 1,300, a concentration of said polyvinyl amine is 50-65 ppm;
- when the molecular weight of said polyvinyl amine is 2,500, the concentration of said polyvinyl amine is 40-50 ppm;
- a concentration of said monomeric acrylic acid is 500-1,500 ppm;
- and
- a pH of the chemical mechanical polishing solution ranges from 4 to 8.
3 more elements
Dependencies are inferred from the claim text.