Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHengyuan Lee, Xinyu Bao
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Abstract
A semiconductor device includes a first conductive layer, a memory layer, a second conductive layer and a selector layer. The memory layer surrounds the first conductive layer. The second conductive layer is disposed aside the memory layer. The selector layer is disposed on the second conductive layer. A first side of the second conductive layer is covered by the memory layer, a second side of the second conductive layer is covered by the selector layer, and a third side of the second conductive layer is exposed by the selector layer.
Claims20
A semiconductor device, comprising:
- a first conductive layer;
- a memory layer surrounding the first conductive layer;
- a second conductive layer aside the memory layer;
- and
- a selector layer on the second conductive layer, wherein a first side of the second conductive layer is covered by the memory layer, a second side of the second conductive layer is covered by the selector layer, and a third side of the second conductive layer is exposed by the selector layer.
A semiconductor device, comprising:
- a first conductive line extending along a first direction;
- a second conductive line extending along a second direction substantially perpendicular to the first direction;
- a third conductive line extending along a third direction substantially perpendicular to the first direction and the second direction, and electrically connected to the first conductive line;
- a memory layer surrounding the third conductive line;
- and
- a first selector pillar extending along the third direction and disposed between the memory layer and the second conductive line.
A method of forming a semiconductor device, comprising:
- forming a stack comprising a plurality of first dielectric layer, a plurality of first conductive layers and a plurality of second dielectric layers alternately arranged;
- forming a first opening in the stack to penetrate through the first dielectric layers, the first conductive layers and the second dielectric layers;
- recessing inner sidewalls of the first conductive layers through the first opening, to form a plurality of first recesses;
- filling second conductive layers in the first recesses;
- recessing inner sidewalls of the second dielectric layers through the first opening, to form a plurality of second recesses;
- forming selector layers in the second recesses;
- forming a memory layer on sidewalls of the first opening;
- and
- filling the first opening with a conductive layer.
Dependencies are inferred from the claim text.