Facet region detection method and wafer generation method

A wafer generation method for generating a wafer from an SiC single-crystal ingot having a first surface and a second surface that is a surface on a side opposite to the first surface, the wafer generation method comprising:

• a first irradiation step of irradiating the first surface of the SiC single-crystal ingot with light from a light source;
• a first fluorescence detection step of detecting fluorescence generated from the first surface of the SiC single-crystal ingot by the light with which the first surface is irradiated and obtaining distribution of the number of photons of the fluorescence;
• a first determination step of determining a facet region and a non-facet region in the first surface on a basis of the number of photons of the fluorescence detected in the first fluorescence detection step with a predetermined value as a boundary;
• a second irradiation step of irradiating the second surface of the SiC single-crystal ingot with light from the light source;
• a second fluorescence detection step of detecting fluorescence generated from the second surface of the SiC single-crystal ingot by the light with which the second surface is irradiated and obtaining distribution of the number of photons of the fluorescence;
• a second determination step of determining a facet region and a non-facet region in the second surface on a basis of the number of photons of the fluorescence detected in the second fluorescence detection step with a predetermined value as a boundary;
• a calculation step of calculating an estimated position of a facet region inside the SiC single-crystal ingot on a basis of the facet region determined in the first surface in the first determination step and the facet region determined in the second surface in the second determination step;
• a laser beam irradiation step of positioning a focal point of a laser beam of a wavelength having transmissibility with respect to the SiC single-crystal ingot to a depth inside the SiC single-crystal ingot corresponding to a thickness of the wafer to be generated, executing irradiation, and forming a separation layer in the SiC single-crystal ingot by moving the focal point and the SiC single-crystal ingot with respect to each other in directions parallel to the first surface;
• a separation step of separating the wafer to be generated from the SiC single-crystal ingot with the separation layer being an interface;
• a grinding step of grinding a separation surface of the SiC single-crystal ingot after the separation step;
• an estimation step of estimating a position of a facet region on an irradiated surface to be irradiated with the laser beam on a basis of the estimated position of the facet region inside the SiC single-crystal ingot calculated in the calculation step and a thickness of the SiC single-crystal ingot that has decreased due to the separation of the wafer from the SiC single-crystal ingot, after the calculation step and before the laser beam irradiation step;
• and
• a setting step of setting an irradiation condition of the laser beam with which the estimated facet region on the irradiated surface is to be irradiated to an irradiation condition different from that of the laser beam with which the non-facet region is to be irradiated, after the estimation step and before the laser beam irradiation step.