Semiconductor device package with die stackup and interposer

A semiconductor memory package comprising:

• a substrate including a top surface and a first set of bond pads exposed at the top surface;
• an interposer positioned on and extending upwardly from the top surface of the substrate, the interposer including a second set of bond pads coupled to a top surface of the interposer;
• a stack of staggered memory dies offset with respect to each other in a longitudinal direction and including a bottom sub-stack of memory dies and an upper sub-stack of memory dies;
• a first plurality of bond wires electrically connecting the bottom sub-stack of memory dies to the first set of bond pads;
• and
• a second plurality of bond wires electrically connecting the upper sub-stack of memory dies to the second set of bond pads,
• wherein the bottom sub-stack of memory dies are not electrically connected to the second set of bond pads and the upper sub-stack of memory dies are not electrically connected to the first set of bond pads;
• and
• a third set of bond pads exposed at the top surface of the substrate, the interposer is positioned between the first and third sets of bond pads;
• and
• a third plurality of bond wires electrically connected to the second plurality of bond wires and the third set of bond pads,
• wherein the interposer is mounted directly on the substrate.

A semiconductor device package comprising:

• a substrate means for providing electrical interconnections between electrical components coupled to the substrate means, the substrate means including a first set of electrical contact means for transmitting and receiving a plurality of electrical signals;
• a stack of storage means each for storing an amount of data, the stack of storage means including a first sub-stack of storage means and a second sub-stack of storage means positioned above the first sub-stack of storage means;
• an interposer means for conveying electrical signals between the second sub-stack of storage means and the substrate means, the interposer means positioned on the substrate means and spaced from the stack of storage means;
• a second set of electrical contact means for transmitting and receiving a plurality of electrical signals, the second set of electrical contact means being positioned on the interposer means and separated from the substrate means by a height of the interposer means;
• a first set of electrical connection means for electrically connecting the first sub-stack of storage means to the first set of electrical contact means, the first set of electrical connection means electrically connected to the first sub-stack of storage means and to the first set of electrical contact means;
• and
• a second set of electrical connection means for electrically connecting the second sub-stack of storage means to the second set of electrical contact means, the second set of electrical connection means electrically connected to the second sub-stack of storage means and to the second set of electrical contact means,
• wherein the first sub-stack of storage means and the second sub-stack of storage means are electrically isolated from one another;
• and
• wherein the substrate means includes a third set of electrical contact means,
• wherein the interposer means is positioned between the first and third sets of electrical contact means, and
• wherein the semiconductor device package further comprises a third set of electrical connection means electrically connecting to the second set of electrical contact means to the third set of electrical contact means.