Interconnect via metal-insulator-metal (MIM) fuse for integrated circuitry

Abstract

Interconnect via metal-insulator-metal (MIM) fuse for integrated circuitry. Two electrode metallization features, which may be within a backend of an IC die, are coupled through a via comprising a fuse material layer. The fuse material layer passes a non-zero leakage current when a lower read voltage is applied across the electrode metallization features, and irreversibly forms an open circuit when a higher programming voltage is applied across the electrode metallization features. The fuse material layer may be a compound of a metal and oxygen and be sufficiently thin to ensure a significant leakage current at the read voltage. Joule heating of the fuse material layer may induce a void between the electrode metallization features as the leakage current through the fuse material layer increases under higher voltages, creating an open circuit.

Dependencies are inferred from the claim text.