Methods for fabricating 3D memory devices and structures with memory arrays and metal layers

A method for fabricating a semiconductor device, the method comprising:

• forming a first level;
• disposing a second level on top of said first level;
• disposing a third level on top of said second level;
• forming a via connection through said second level and said third level,
• wherein said first level comprises a plurality of first transistors, at least four independently controlled first memory arrays, and first filled holes therein,
• wherein said second level comprises a plurality of second memory arrays and second filled holes therein,
• wherein said third level comprises a plurality of third transistors, a plurality of third memory arrays, and at least one metal layer therein;
• disposing a fourth level on top of said third level,
• wherein said fourth level further comprises at least one Look-Up-Table (“LUT”) circuit;
• and
• bonding said fourth level to said third level via a plurality of metal-to-metal bonding regions.

A method for fabricating a semiconductor device, the method comprising:

• forming a first level;
• disposing a second level on top of said first level;
• disposing a third level on top of said second level;
• forming a via connection through said second level and said third level,
• wherein said first level comprises forming a plurality of first transistors, at least four independently controlled first memory arrays, and first filled holes therein,
• wherein said second level comprises a plurality of second memory arrays and second filled holes therein,
• wherein said third level comprises a plurality of third transistors, a plurality of third memory arrays, and at least one metal layer therein,
• wherein said plurality of second memory arrays comprises at least four second sub-arrays;
• and
• further comprising providing each of said at least four second sub-arrays with independent control line access;
• disposing a fourth level on top of said third level,
• wherein said fourth level further comprises redundancy and repair control circuits;
• and
• bonding said fourth level to said third level via a plurality of metal-to-metal bonding regions.