Methods of forming metal ion barrier layers and resulting structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Pin Chiu, Yu-Bey Wu, Dian-Hau Chen
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Abstract
A first bond pad of a first device and a second bond pad of a second device are implanted with metal ions. The first and second semiconductor device are bonded together using a direct metal-to-metal bond and an overlay offset occurs between the bond pads such that a portion of the first bond pad and a portion of the second bond pad overlaps and contacts a dielectric material layer. During the bonding process, however, diffusion of the metal ions provides a barrier layer at the interface of the bond pads and the dielectric layers.
Claims20
A method comprising:
- implanting first metal ions in a first conductive material of a first bond pad of a first semiconductor device or second metal ions in a second conductive material of a second bond pad of a second semiconductor device;
- aligning the second bond pad to the first bond pad, the alignment having an overlay offset that causes an edge of the second bond pad to overlap a first dielectric layer that surrounds the first bond pad, wherein a first interface is formed between the second bond pad and the first dielectric layer;
- and
- performing a solder-free direct metal-to-metal bonding process to interdiffuse the first conductive material with the second conductive material, the bonding process causing diffusion of the first metal ions or the second metal ions to the first interface and forming a first metal oxide of the first metal ions or the second metal ions at the first interface.
A device comprising:
- a first semiconductor device comprising a first bond pad, a first barrier layer surrounding the first bond pad, and a first dielectric layer surrounding the first barrier layer, wherein the first bond pad includes a first metal ion barrier layer surrounding a conductive material;
- and
- a second semiconductor device comprising a second bond pad, a second barrier layer surrounding the second bond pad, and a second dielectric layer surrounding the second barrier layer, wherein the second bond pad is directly bonded with the first bond pad, wherein a first portion of the second bond pad extends beyond an edge of the first bond pad and overlaps the first dielectric layer, and wherein a first metal oxide is disposed on the first portion of the second bond pad.
A device, comprising:
- a first insulating bonding layer;
- a first bond pad in the first insulating bonding layer, the first bond pad comprises a first metal ion barrier layer, the first metal ion barrier layer comprising a first metal oxide at a surface of the first bond pad;
- a second insulating bonding layer contacting the first insulating bonding layer and the first metal oxide;
- and
- a second bond pad in the second insulating bonding layer and contacting the first bond pad, the second bond pad comprises a second metal ion barrier layer, the second metal ion barrier layer comprising a second metal oxide at a surface of the second bond pad, the second metal oxide contacting the first insulating bonding layer.
Dependencies are inferred from the claim text.