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US 12,653,006 B2Granted
Semiconductor device including isolation structures doped with impurities and having charge trapping layers
AssigneeNanya Technology Corporation
InventorsKuo-Chung Hsu, En-Jui Li
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate and a first isolation structure. The substrate has a cell region and a peripheral region. The first isolation structure is disposed in the cell region of the substrate. The first isolation structure includes a first dielectric layer and a second dielectric layer. The second dielectric layer is spaced apart from the substrate by the first dielectric layer. The second dielectric layer is doped with an impurity.
Claims11
A semiconductor device, comprising:
- a substrate having a cell region and a peripheral region;
- and
- a first isolation structure disposed in the cell region of the substrate, wherein the first isolation structure comprises:
- a first dielectric layer;
- and
- a second dielectric layer spaced apart from the substrate by the first dielectric layer, wherein the second dielectric layer is doped with an impurity;
- wherein the peripheral region comprises a second isolation structure, the second isolation structure comprises a first dielectric layer and a second dielectric layer spaced apart from the substrate by the first dielectric layer;
- wherein the second dielectric layer of the second isolation structure comprises a charge trapping material.
5 more elements
Dependencies are inferred from the claim text.