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US 12,652,991 B2Granted
Semiconductor processing apparatus
AssigneeASM IP Holding B.V.
InventorsJaeMin Roh, ChangMin Lee
Life of this patent
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Abstract
A substrate processing apparatus capable of improving the uniformity of thin films on a substrate includes: a substrate support unit having a first slope; and a flow control ring arranged to surround the substrate support unit and having a second slope, wherein, during alignment, as the substrate support unit moves in a first direction, the first slope and the second slope contact each other, and due to the contact, the flow control ring slides in a second direction that is different from the first direction.
Claims18
A substrate processing apparatus comprising:
- a substrate support unit having a first slope;
- a flow control ring arranged to surround the substrate support unit and having a second slope;
- a processing unit on the substrate support unit;
- an exhaust unit defining an exhaust space surrounding the reaction space;
- and
- a channel between the reaction space and the exhaust space is lower than a first upper surface of the substrate support unit,
- wherein a reaction space is formed between the substrate support unit and the processing unit,
- a lower space is formed under the substrate support unit;
- a gap is formed between the first slope of the substrate support unit and the second slope of the flow control ring, the reaction space and the lower space are connected to each other through the gap, and
- gas is supplied by the processing unit during a processing operation of the substrate processing apparatus, and a first upper surface of the substrate support unit is higher than a second upper surface of the flow control ring during the supply of the gas, so that a portion of the first slope of the substrate support unit is exposed to the reaction space.
7 more elements
A substrate processing apparatus comprising:
- a substrate support unit;
- a flow control ring arranged to surround the substrate support unit;
- a processing unit on the substrate support unit;
- an exhaust unit defining an exhaust space surrounding the reaction space;
- and
- a channel between the reaction space and the exhaust space is lower than a first upper surface of the substrate support unit,
- wherein a reaction space is formed between the substrate support unit and the processing unit,
- a lower space is formed under the substrate support unit,
- a gap is formed between the substrate support unit and the flow control ring, the reaction space and the lower space are connected to each other through the gap,
- a first upper surface of the substrate support unit is higher than a second upper surface of the flow control ring, and
- gas supplied by the processing unit flows from a space on the first upper surface to a space on the second upper surface.
8 more elements
Dependencies are inferred from the claim text.