Method for etching a layer through a patterned mask layer
AssigneeTokyo Electron Limited
InventorsKangyi Lin, Peng Wang
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Abstract
A method for fabricating a semiconductor device, where the method includes loading a substrate into a plasma chamber, the substrate including a patterned mask layer with an opening exposing a layer-to-be-patterned; and performing a number of cycles of a first plasma etch process, the first plasma etch process including: a first deposition step to conformally deposit a layer including an organic material including a fluorocarbon over the substrate, a deposition-etch step to sputter deposit a target material from a target electrode of the plasma chamber and extend the opening into the layer-to-be-patterned using an anisotropic self-limiting plasma etch process, and a first flush step to remove remaining organic material.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- loading a substrate into a plasma chamber, the substrate comprising a patterned mask layer with an opening exposing a layer-to-be-patterned;
- and
- performing a number of cycles of a first plasma etch process, the first plasma etch process comprising:
- a first deposition step to conformally deposit a layer comprising an organic material comprising a fluorocarbon over the substrate,
- a deposition-etch step to sputter deposit a target material from a target electrode of the plasma chamber and extend the opening into the layer-to-be-patterned using an anisotropic self-limiting plasma etch process, and
- a first flush step to remove remaining organic material.
A method for fabricating a semiconductor device, the method comprising:
- loading a substrate over a bottom electrode of a plasma chamber, the substrate comprising a patterned mask layer with an opening exposing a layer-to-be-patterned;
- and
- performing a first plasma etch process, the first plasma etch process comprising:
- exposing the substrate to a first plasma generated in the plasma chamber from a first gas comprising a fluorocarbon and a first inert gas, the first plasma being generated using a first radio frequency (RF) bias power and a first RF source power,
- after the exposing, generating a second plasma over the substrate from a second inert gas and coupling a first direct current (DC) bias to a target electrode disposed within the plasma chamber, the first DC bias being negative relative to the bottom electrode, the second plasma being generated using a second RF bias power and a second RF source power, and
- exposing the substrate to a third plasma configured to remove exposed organic material, the third plasma being generated in the plasma chamber using a third RF bias power and a third RF source power.
A method for fabricating a semiconductor device, the method comprising:
- having, within a plasma chamber, an upper electrode and a lower electrode, wherein a surface of the upper electrode facing the lower electrode comprises a target material;
- loading a substrate over the lower electrode, the substrate comprising an etch mask having a pattern of openings, a bottom of the openings exposing a layer-to-be-patterned;
- performing a first plasma etch process, the first plasma etch process being a cyclic process, each cycle of the cyclic process comprising a sequence of plasma process steps, the sequence comprising:
- a deposition step, wherein a conformal layer of organic material comprising a fluorocarbon is coated over the substrate;
- a deposition-etch step to selectively etch the layer-to-be-patterned at the bottom of the openings using an anisotropic self-limiting plasma etch and, concurrently, sputter the target material over the substrate by biasing the upper electrode to a first DC bias, the sputtering forming an etch-resistant lining comprising the target material, wherein the deposition-etch step is configured to form the lining over the etch mask and sidewalls of the openings while exposing the bottom of the openings;
- and
- a flush step to remove remaining organic material.
Dependencies are inferred from the claim text.