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US 12,652,972 B2Granted
Field suppressed metal gapfill
AssigneeApplied Materials, Inc.
InventorsAnnamalai Lakshmanan, Yixiong Yang, Srinivas Gandikota, Joung Joo Lee, Liqi Wu, Jie Zhang, Tuerxun Ailihumaer, Yogesh Sharma
Life of this patent
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Abstract
Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill.
Claims20
A method comprising:
- exposing a substrate surface with at least one feature formed therein to a first metal halide and a reductant to form a first metal gapfill within the at least one feature, the at least one feature having an opening and two sidewalls, and extending a depth from a top surface to a bottom surface, the first metal halide comprising one or more of molybdenum (Mo), cobalt (Co), or tungsten (W);
- and
- depositing a second metal material that consists essentially of tungsten (W) on the substrate surface before forming the first metal gapfill, wherein the second metal material is deposited directly on the top surface and the bottom surface, and not on the two sidewalls, by physical vapor deposition (PVD), the first metal gapfill is deposited in a bottom-up, non-conformal fashion, the at least one feature is filled without substantial deposition of the first metal gapfill on the top surface, and a thickness of the first metal gapfill on the bottom surface is greater than a thickness of the first metal gapfill on the top surface.
A method comprising:
- depositing a second metal material comprising tungsten (W) on a substrate surface with at least one feature formed therein, the second metal material being deposited by physical vapor deposition (PVD), the at least one feature having an opening and two sidewalls, and extending a depth from a top surface to a bottom surface, and the second metal material being deposited on the top surface and the bottom surface, and not on the two sidewalls;
- and
- exposing the substrate surface to a first metal halide comprising MoCl5 and a reductant comprising H2 to form a first metal gapfill within the at least one feature in a bottom-up, non-conformal fashion, on top of the second metal material on the bottom surface, a molar ratio of the reductant to the first metal halide being less than or equal to about 3000,
- wherein the at least one feature is filled without substantial deposition of the first metal gapfill on the top surface.
1 more element
Dependencies are inferred from the claim text.