Image sensor having internal reflector in color filter
AssigneeVisEra Technologies Company Limited
InventorsHao-Wei Liu, Sheng-Chuan Cheng, Ching-Chiang Wu
Life of this patent
Estimating the term…
Abstract
An image sensor includes a first unit. The first unit includes a first photodiode having a first dimension, a second photodiode disposed adjacent the first photodiode and having a second dimension that is greater than the first dimension, a first color filter overlapping the first photodiode and the second photodiode, and a first internal reflector disposed in the first color filter and overlapping the first photodiode. The first internal reflector has an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refraction index of the first internal reflector is smaller than a refraction index of the first color filter.
Claims18
An image sensor comprising:
- a first unit comprising:
- a first photodiode having a first dimension;
- a second photodiode disposed adjacent the first photodiode and having a second dimension that is greater than the first dimension;
- a first color filter overlapping the first photodiode and the second photodiode, wherein the first color filter continuously covers an entire top surface of the first photodiode and an entire top surface of the second photodiode, without an inner grid in the first color filter, wherein the first unit comprises a first grid surrounding the first color filter;
- and
- a first internal reflector disposed in the first color filter and overlapping the first photodiode, wherein the first internal reflector has an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refraction index of the first internal reflector is smaller than a refraction index of the first color filter, wherein the first internal reflector has an angle θ1 between the inclined light receiving surface and the first photodiode, and wherein the angle θ1 satisfies:
- 0.3
- *
- H
- 1
- 0.5
- *
- W
- 2
- +
- W
- 1
- ≤
- tan
-
- θ
- 1
- ≤
- H
- 1
- W
- 1
- ,
- in which H1 is a height of the first grid, W1 is the first dimension of the first photodiode, and W2 is the second dimension of the second photodiode.
An image sensor comprising:
- a first unit comprising:
- a first photodiode having a first dimension;
- a second photodiode disposed adjacent the first photodiode and having a second dimension that is greater than the first dimension;
- a first color filter overlapping the first photodiode and the second photodiode, wherein the first color filter continuously covers an entire top surface of the first photodiode and an entire top surface of the second photodiode, without an inner grid in the first color filter;
- and
- a first internal reflector disposed in the first color filter and overlapping the first photodiode, wherein the first internal reflector has an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refraction index of the first internal reflector is smaller than a refraction index of the first color filter;
- and
- a second unit, the second unit comprising:
- a third photodiode having a third dimension;
- a fourth photodiode disposed adjacent the third photodiode and having a fourth dimension that is greater than the third dimension;
- a second color filter overlapping the third photodiode and the fourth photodiode;
- and
- a second internal reflector disposed in the second color filter and overlapping the third photodiode, wherein the second internal reflector has an inclined light receiving surface inclined from a top surface of the second color filter toward the fourth photodiode, a refraction index of the second internal reflector is smaller than a refraction index of the second color filter, and a transparency of the second internal reflector is different from a transparency of the first internal reflector.
Dependencies are inferred from the claim text.