Hybrid orientation channels and mixed orientation bottom epitaxy

A semiconductor device comprising:

• a first fin comprising a first crystal orientation in a first region of a substrate comprising a second crystal orientation;
• a second fin comprising the second crystal orientation in a second region of the substrate comprising the second crystal orientation, the second fin directly on a surface of the substrate;
• a mixed crystal bottom source or drain region between the first fin and the first region of the substrate, the mixed crystal bottom source or drain region comprising a first bottom source or drain region comprising the second crystal orientation and a second bottom source or drain region comprising the first crystal orientation, the first bottom source or drain region comprising an epitaxy that is grown from the substrate, and the second bottom source or drain region comprising an epitaxy that is grown from an exposed end of the first fin;
• and
• a single crystal bottom source or drain region comprising the second crystal orientation on sidewalls of the second fin and on the surface of the substrate in the second region.

A semiconductor device comprising:

• a first fin in a first region of a substrate, the first fin comprising a top portion comprising a first crystal orientation and a bottom portion comprising a second crystal orientation, the substrate comprising the second crystal orientation;
• a second fin comprising the second crystal orientation in a second region of the substrate comprising the second crystal orientation, the second fin directly on a surface of the substrate;
• a mixed crystal bottom source or drain region in the first region, the mixed crystal bottom source or drain region comprising a first bottom source or drain region comprising the second crystal orientation on sidewalls of the bottom portion of the first fin and a second bottom source or drain region comprising the first crystal orientation on sidewalls of the top portion of the first fin, the first bottom source or drain region comprising an epitaxy that is grown from the substrate, and the second bottom source or drain region comprising an epitaxy that is grown from an exposed end of the first fin;
• and
• a single crystal bottom source or drain region comprising the second crystal orientation on sidewalls of the second fin and on the surface of the substrate in the second region.