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US 12,652,832 B2Granted
Reduced N-well and P-well spacing
AssigneeInternational Business Machines Corporation
InventorEffendi Leobandung
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein describe semiconductor devices that include a semiconductor device includes a shallow trench isolation (STI) oxide and an N-well region with a N-well implant dopant. The N-well region may contact a first side of the STI oxide. The semiconductor structure also includes a P-well region with a P-well implant dopant. The P-well region may contact a second side of the STI oxide.
Claims9
A semiconductor structure, comprising:
- a shallow trench isolation (STI) oxide formed in a trench from etching a dummy material;
- an N-well region comprising a N-well implant dopant, wherein the N-well region contacts a first side of the STI oxide;
- and
- a P-well region comprising a P-well implant dopant, wherein the P-well region contacts a second side of the STI oxide, wherein the STI oxide comprises a width between the N-well region and P-well region that is less than a straggle distance for the N-well implant dopant into the STI oxide and less than a straggle distance for the P-well implant dopant into the STI oxide;
- wherein the width between the N-well region and P-well region that is less than 0.03 microns.
2 more elements
A semiconductor structure, comprising:
- a shallow trench isolation (STI) region comprising an STI oxide formed in a trench from etching a dummy material;
- a first well comprising a first implant dopant, wherein the first implant dopant does not extend through the STI oxide, wherein the STI oxide comprises a width that is less than a straggle distance for the first implant dopant through the STI oxide;
- a second well comprising a second implant dopant, wherein the second implant dopant does not extend through the STI oxide;
- and
- wherein the width between the first well and the second well that is less than 0.03 microns.
2 more elements
Dependencies are inferred from the claim text.