Blended energy implant

An ion implantation system comprising:

• an ion source configured to ionize a dopant material and to generate an ion beam;
• a beamline assembly positioned downstream of the ion source and configured to transport the ion beam toward a workpiece;
• a scanning apparatus configured to scan one or more of the ion beam and the workpiece with respect to one another along a first scan axis;
• an acceleration/deceleration stage configured to receive the ion beam during transport thereof;
• an end station positioned downstream of the acceleration/deceleration stage, wherein the end station comprises a workpiece support configured to selectively position the workpiece in a path of the ion beam;
• one or more power sources operably coupled to the acceleration/deceleration stage and configured to provide one or more electrical bias signals thereto;
• and
• a controller configured to selectively vary the one or more electrical bias signals concurrent with the scanning of the one or more of the ion beam and workpiece based, at least in part, on a position of the ion beam with respect to the workpiece and a predetermined implant profile across the workpiece, wherein selectively varying the one or more electrical bias signals selectively varies a resultant depth of implantation of ions into the workpiece concurrent with the scanning.

An ion implantation system, comprising:

• an ion source configured to generate an ion beam;
• an acceleration/deceleration stage configured to receive the ion beam to produce a final ion beam having a final energy associated therewith;
• a workpiece support configured to selectively position a workpiece along a path of the final ion beam;
• a scanning apparatus configured to scan one or more of the ion beam and workpiece support with respect to one another along a first scan axis and a second scan axis;
• one or more power sources operably coupled to the acceleration/deceleration stage and configured to provide one or more electrical bias signals thereto;
• a waveform generator operably coupled to one or more of the one or more power sources and configured to controllably apply a waveform to the one or more electrical bias signals;
• and
• a controller operably coupled to the one or more power sources and the waveform generator and configured to selectively vary the one or more electrical bias signals supplied to the acceleration/deceleration stage concurrent with the scanning of the one or more of the ion beam and the workpiece support to implant a plurality of energies of the ion beam into the workpiece in a predetermined manner, wherein the selective variation of the one or more electrical bias signals supplied to the acceleration/deceleration stage is based, at least in part, on the waveform, a position of the ion beam with respect to the workpiece, and a predetermined implant profile across the workpiece, wherein a resultant depth of the implantation of ions into the workpiece is varied concurrent with the scanning.

An ion implantation system, comprising:

• an ion source configured to form an ion beam and to direct the ion beam toward a workpiece;
• one or more beamline components configured to transport the ion beam along a beam path;
• a scanner apparatus configured to selectively iteratively scan one or more of the ion beam and the workpiece along a first scan axis;
• an acceleration/deceleration stage downstream of the scanner apparatus;
• a power source configured to provide an electrical bias signal to the acceleration/deceleration stage;
• and
• a controller configured to vary the electrical bias signal provided to the acceleration/deceleration stage from the power source as one or more of the ion beam and the workpiece is iteratively scanned along the first scan axis, thereby selectively varying a final energy of ions implanted into the workpiece along the first scan axis, wherein a resultant depth of implantation of ions into the workpiece is varied concurrent with the iterative scanning.