Devices and methods for reading a memristive element
OwnerSahitya Varma Vegesna, Heidemarie Schmidtinventors
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Abstract
According to various aspects, a method is provided including: setting a memristive element into a memristive state of a plurality of memristive states, determining one or more static state parameter values of the memristive element associated with the memristive state, wherein determining the one or more static state parameter values includes: determining a current/voltage characteristic of the memristive element, and fitting the current/voltage characteristic based on a physical model to determine the one or more static state parameter values, wherein the physical model is based on static state parameters for which the static state parameter values are determined.
Claims20
A method comprising:
- setting a memristive element into a memristive state of a plurality of memristive states;
- determining a current/voltage characteristic of the memristive element;
- fitting the current/voltage characteristic based on a physical model, wherein the physical model comprises one or more static state parameters to be determined, and wherein the physical model depends on a temperature of the memristive structure;
- and
- determining a value of the one or more static state parameters of the memristive element associated with the memristive state based on fitting the current/voltage characteristic to the physical model.
A method comprising:
- setting a memristive element into a memristive state of a plurality of memristive states;
- determining a current/voltage characteristic of the memristive element;
- fitting the current/voltage characteristic based on a physical model, wherein the physical model comprises one or more static state parameters to be determined;
- determining a value of the one or more static state parameters of the memristive element associated with the memristive state based on fitting the current/voltage characteristic to the physical model;
- determining, for at least one static state parameter value of the determined static state parameter values, whether the at least one static state parameter value is within a predefined range associated with the at least one static state parameter value;
- and
- in the case that the at least one static state parameter value is within the predefined range associated with the at least one static state parameter value, validating the memristive element, and/or
- in the case that the at least one static state parameter value is outside the predefined range associated with the at least one static state parameter value, discarding the memristive element.
A method comprising:
- setting a memristive element into a memristive state of a plurality of memristive states;
- determining a current/voltage characteristic of the memristive element;
- fitting the current/voltage characteristic based on a physical model, wherein the current/voltage characteristic is fitted based on the following formula:
- V
- =
- A
-
- (
- k
- B
-
- T
- q
- )
-
- log
-
- (
- 1
- B
- +
- 1
- )
-
- (
- 1
- +
- C
-
- k
- B
-
- T
- q
-
- log
-
- (
- 1
- B
- +
- 1
- )
- )
- +
- I
- ·
- D
- ,
- wherein V is an applied voltage, I is a current through the memristive element responsive to applying the voltage V, kB is the Boltzmann constant, T is the temperature of the memristive element, q is the electron charge, and, preferably, A, B, C, and D are static state parameters;
- and
- determining a value of the one or more static state parameters of the memristive element associated with the memristive state based on fitting the current/voltage characteristic to the physical model.
Dependencies are inferred from the claim text.