Quantum device, method for reading the state of charge, method for determining a stability diagram and method for determining spin correlations

A semiconductor device, comprising:

• a layer of a semiconductor material in which is formed an active zone;
• a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in a part of the active zone;
• a plurality of second gates forming a plurality of columns, lines of the plurality of lines intersecting the columns of the plurality of columns while covering in the part of the active zone and being electrically isolated from the plurality of lines, an intersection of two successive lines with two successive columns delimiting an island so as to obtain a plurality of islands spread out on a plurality of chains of islands, the plurality of chains of islands being arranged along an axis parallel to the lines of the plurality of lines, each chain of islands of the plurality of chains of islands comprising a plurality of islands, a first end materialized by a first extreme column and a second end materialized by a second extreme column;
• at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, end of the designated measurement gate closest to the second extreme column being situated in the active zone, the at least one third gate or gates being configured to realize one or more measurement means arranged so as to be able to measure the charge state of the island situated at the level of the second end of each chain of islands;
• a first electrode and a second electrode situated on either side of the designated measurement gate or gates in the active zone and configured such that a current going from the first electrode to the second electrode passes between the designated measurement gate or gates and the second extreme column.