Mask exposure system and mask exposure method

A mask exposure method comprising:

• obtaining design data of patterns to be formed on a mask;
• moving a stage on which the mask is mounted to an interior space of a chamber;
• evacuating the chamber;
• measuring a temperature of the mask;
• measuring an internal temperature of the chamber;
• predicting the temperature of the mask over time based on a difference between the temperature of the mask and the internal temperature of the chamber;
• determining an amount of correction of a deflector over time based on the temperature of the mask over time and a starting position of an exposure process on the mask;
• determining a degree of deflection based on the amount of correction and positions of the patterns included in the design data;
• and
• exposing the patterns by irradiating an electron beam on the mask based on the degree of deflection.

An electron beam correction method for exposing a mask, the electron beam correction method comprising:

• measuring a temperature difference between the mask and an interior of a chamber having the mask;
• predicting a temperature change of the mask over time based on the temperature difference;
• predicting a degree of distortion of a position on the mask over time based on the temperature change of the mask over time and a position of a surface of the mask at which an exposure process starts;
• and
• determining an amount of correction of an electron beam based on the degree of distortion over time.