Photoresist composition and method of manufacturing a semiconductor device

A photoresist composition, comprising:

• a polymer,
• wherein the polymer comprises:
• a monomer unit having a pendant sensitizer selected from the group consisting of a substituted aromatic group and an unsubstituted aromatic group,
• a crosslinking group bonded to the sensitizer, wherein the crosslinking group is selected from the group consisting of one or more of a C2-C30 aromatic group having a functional group selected from the group consisting of an azo group, an alkyl halide group, and a peroxide group;
• a monomer unit having a pendant organic group, wherein the pendant organic group is an unsubstituted C1-C30 group or a C1-C30 group substituted with one or more of —I, —Br, —Cl, —F, —NH2, —COOH, —OH, —SH, —N3, —S(═O)—, an alkene group, an alkyne group, an imine group, an ether group, an ester group, an aldehyde group, a ketone group, an amide group, a sulfone group, an acetic acid group, a carboxylic acid group, or a cyanide group;
• and
• a monomer unit having a pendant acid labile group;
• and
• a photoacid generator.

A photoresist composition, comprising:

• a polymer, comprising:
• a monomer unit having a pendant sensitizer group and a crosslinking group bonded to the sensitizer, and
• a monomer unit having a pendant acid labile group,
• wherein the sensitizer group is selected from the group consisting of a phenyl group, a naphthalenyl group, a phenanthrenyl group, an anthracenyl group, and a phenalenyl group, and
• the crosslinking group is one or more of a C2-C30 aromatic group having a functional group selected from the group consisting of an azo group, an alkyl halide group, and a peroxide group;
• and
• a photoactive compound.