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US 12,650,379 B2Granted
Tunable shrinkage and trim process for fabricating gratings
AssigneeMeta Platforms Technologies, LLC
InventorsAustin Lane, Ankit Vora, Richard Farrell, Keren Zhang
Life of this patent
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Abstract
A method is provided. The method includes forming a shrink material layer over a substrate including a photoresist pattern. The method also includes exposing the substrate with the shrink material layer to an activating radiation via a grey-tone mask that provides a predetermined light transmittance profile for the activating radiation. The method also includes removing at least a portion of the shrink material layer.
Claims20
A method, comprising:
- forming a shrink material layer over a substrate including a photoresist pattern;
- exposing the substrate with the shrink material layer to an activating radiation via a grey-tone mask that provides a predetermined light transmittance profile for the activating radiation;
- and
- removing at least a portion of the shrink material layer, wherein the shrink material layer reacts with the photoresist pattern at different selective portions of the photoresist pattern to vary a width of at least one photoresist line and vary a width of at least one trench in the photoresist pattern.
1 more element
A method, comprising:
- configuring a grey-tone mask to provide a non-uniform light transmittance profile for a radiation for creating a varying duty cycle profile in a grating to be fabricated;
- applying a shrink material over a photoresist pattern;
- exposing the photoresist pattern with the shrink material to the radiation transmitting through the grey-tone mask to cause a reaction between the shrink material and the photoresist pattern at selective portions of the photoresist pattern covered by the shrink material;
- and
- removing at least a portion of the shrink material to form the grating, wherein the selective portions of the photoresist pattern varies in a width of at least one photoresist line and varies in a width of at least one trench in the photoresist pattern.
2 more elements
A method, comprising:
- forming a photoresist pattern through a lithography mask via a lithography process, the photoresist pattern including a first duty cycle profile;
- applying a shrink material over the photoresist pattern;
- exposing the photoresist pattern with the shrink material to a radiation through a grey-tone mask having a non-uniform light transmittance profile for the radiation, the non-uniform light transmittance profile corresponding to a second duty cycle profile that is different from the first duty cycle profile;
- and
- removing at least a portion of the shrink material to form a grating having the second duty cycle profile, wherein the second duty cycle profile varies in a width of at least one photoresist line and varies in a width of at least one trench in the photoresist pattern.
2 more elements
Dependencies are inferred from the claim text.