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US 12,649,693 B2Granted
Antiferroelectric containing dysprosium and a manufacturing method thereof
AssigneesHyundai Motor Company, Kia Corporation, Korea Institute of Ceramic Engineering and Technology
InventorsHyung Suk Kim, Hyo Soon Shin, Dong Hun Yeo, Jeoung Sik Choi
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Abstract
An antiferroelectric and a method for manufacturing an antiferroelectric are disclosed herein. The antiferroelectric may have high permittivity and breakdown voltage by having a PbxLa1-x([Zr1-YSnY]ZTi1-Z) composition. The manufacturing of the antiferroelectric may be performed through appropriate mixing and dysprosium addition.
Claims10
A method for manufacturing an antiferroelectric, the method comprising:
- mixing dielectric precursors to obtain a precursor mixture, wherein the dielectric precursors comprise:
- 50%-60% by weight of lead oxide (PbO);
- 15%-30% by weight of zirconium oxide (ZrO2);
- 1%-5% by weight of titanium oxide (TiO2);
- 8%-14% by weight of lanthanum oxide (La2O5) and 1%-16% by weight of tin oxide (SnO2);
- calcining the precursor mixture to obtain a calcined product;
- pressurizing the calcined product to obtain a molded article;
- adding dysprosium (Dy) to the molded article to obtain a resulting product;
- and
- sintering the resulting product to obtain the antiferroelectric,
- wherein the antiferroelectric has a PbxLa1-x([Zr1-ySny]zTi1-z) composition, and X, Y, and Z are individually greater than 0 and less than 1.
8 more elements
Dependencies are inferred from the claim text.