Semiconductor device

A semiconductor device, comprising:

• a bottom wafer;
• a top wafer bonded to the bottom wafer, wherein the top wafer comprises a first interconnection structure and a buried insulation layer;
• a first dielectric layer disposed on the top wafer, wherein the buried insulation layer is disposed between the first interconnection structure and the first dielectric layer;
• and
• a deep via conductor structure penetrating through the first dielectric layer and the buried insulation layer, wherein the deep via conductor structure is connected with the first interconnection structure, and the deep via conductor structure comprises:
• a first portion;
• and
• a second portion connected with the first portion, wherein the first portion is sandwiched between the second portion and the first interconnection structure, and a sidewall of the deep via conductor structure comprises a turning section located between a sidewall of the first portion and a sidewall of the second portion,
• wherein a material composition of the first dielectric layer is different from a material composition of the buried insulation layer, and the first dielectric layer is thicker than the buried insulation layer.