Semiconductor device with air gap

A semiconductor device, comprising:

• an interconnect structure disposed over a semiconductor substrate, wherein the interconnect structure comprises a first interconnect portion and a second interconnect portion;
• a first porous dielectric portion disposed over and in direct contact with the first interconnect portion of the interconnect structure;
• a dielectric layer surrounding the first porous dielectric portion and covering the interconnect structure, wherein a top surface of the dielectric layer is higher than a top surface of the first porous dielectric portion;
• a bonding pad disposed over the dielectric layer and the first porous dielectric portion, wherein the bonding pad and the first porous dielectric portion of the interconnect structure are separated by a first air gap;
• a first conductive via and a second conductive via disposed between and electrically connecting the bonding pad and the first interconnect portion of the interconnect structure;
• and
• a second porous dielectric portion disposed over and in direct contact with the second interconnect portion of the interconnect structure, wherein the bonding pad and the second porous dielectric portion of the interconnect structure are separated by a second air gap.