Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsShuichi Hiza, Kunihiko Nishimura
Life of this patent
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Abstract
A nitride semiconductor layer formed on a growth substrate is attached to a support substrate via a reversible adhesive layer. Next, the growth substrate is removed, a new substrate is bonded to the exposed nitride semiconductor layer, and subsequently, the reversible adhesive layer and the support substrate are removed. As a result, the nitride semiconductor layer is transferred on the new substrate from the growth substrate. Performed in a step of bonding the nitride semiconductor layer and the new substrate are a step of pressure-contacting the nitride semiconductor layer and the new substrate, a step of softening the reversible adhesive layer, and a step of curing the reversible adhesive layer again.
Claims12
A method of manufacturing a semiconductor substrate, comprising:
- (a) attaching a semiconductor layer formed on a growth substrate and a support substrate via a reversible adhesive layer made up of a reversible adhesive agent and curing the reversible adhesive layer;
- (b) removing the growth substrate to expose the semiconductor layer after the step (a);
- (c) bonding a new substrate to the semiconductor layer after the step (b);
- and
- (d) removing the reversible adhesive layer and the support substrate after the step (c), wherein
- the step (c) includes:
- (c-1) pressure-contacting the semiconductor layer and the new substrate;
- (c-2) softening the reversible adhesive layer;
- and
- (c-3) curing the reversible adhesive layer again after the steps (c-1) and (c-2).
Dependencies are inferred from the claim text.