Metal etch
AssigneeLam Research Corporation
InventorsYiwen Fan, Wenbing Yang, Ran Lin, Samantha SiamHwa Tan, Timothy William Weidman, Tamal Mukherjee
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Abstract
A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The metal halide material is exposed to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex. At least some of the metal halide ligand complex is vaporized.
Claims19
A method for etching a metal containing material, comprising:
- exposing the metal-containing material to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material;
- exposing the metal halide material to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex;
- and
- vaporizing at least some of the metal halide ligand complex, wherein the exposing the metal containing material to the halogen containing fluid or plasma and the exposing the metal halide material to the ligand containing fluid or plasma are performed simultaneously, and wherein the halogen containing fluid is different from the ligand containing fluid.
A method for etching a metal containing material, comprising:
- exposing the metal containing material to an etching fluid or plasma comprising phosphorous and chlorine to form the metal into at least one complex of a metal phosphorous chloride ligand complex, wherein the exposing the metal containing material to the etching fluid or plasma, comprises:
- providing an etching fluid, wherein the etching fluid comprises PCl5;
- and
- forming the etching fluid into a plasma;
- and
- vaporizing at least some of the metal phosphorous chloride ligand complex.
A method for etching a metal containing material, comprising:
- exposing the metal-containing material to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material;
- exposing the metal halide material to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex;
- and
- vaporizing at least some of the metal halide ligand complex, wherein the halogen containing fluid or plasma comprises NF3 and wherein the ligand containing fluid comprises a ligand containing gas or vapor comprising at least one of PCl5, and PCl3.
Dependencies are inferred from the claim text.