Method for manufacturing superconductive qubit device
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsYu-Chen Yeh, Chi-Te Liang, Hsi-Sheng Goan
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Abstract
A device includes a source region, a drain region, a channel region, a pair of depletion gates, an accumulation gate, and a superconductive resonator. The channel region is between the source region and the drain region. The pair of depletion gates are spaced apart from each other. The pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates. The accumulation gate is above and crossing the pair of depletion gates. The superconductive resonator is laterally adjacent the quantum dot qubit region.
Claims20
A method comprising:
- forming a channel region, a source region, and a drain region in a substrate;
- depositing a superconductive layer over the substrate to cover the channel region, the source region, and the drain region;
- patterning the superconductive layer to remove a portion of the superconductive layer covering the channel region to form a conductive resonator over the substrate and spaced apart from the channel region in a top view;
- and
- forming an accumulation gate over the conductive resonator and covering the channel region.
A method comprising:
- forming a source region, a drain region, and a channel region in a substrate, wherein the channel region is between the source region and the drain region;
- forming a pair of depletion gates spaced apart from each other, wherein the pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates;
- and
- forming a superconductive resonator laterally adjacent the quantum dot qubit region and outside a region between the pair of depletion gates in a top view.
A method comprising:
- forming a source region, a drain region, and a channel region in a substrate, wherein the source region and the drain region are on opposite sides of the channel region;
- forming a conductive resonator over the substrate and having a linear portion adjacent the channel region in a top view and extending along a first direction;
- forming a pair of depletion gates over the channel region, arranged in the first direction, and extending along a second direction non-parallel with the first direction of the linear portion of the conductive resonator in the top view, wherein the pair of depletion gates defines a quantum dot qubit region in the channel region;
- and
- forming an accumulation gate covering the pair of depletion gates and the quantum dot qubit region, wherein the accumulation gate is made of a superconductive material and is spaced apart from the conductive resonator in a top view, and a length of the conductive resonator is greater than a distance between the pair of depletion gates in the first direction.
Dependencies are inferred from the claim text.