Method of manufacturing optoelectronic devices
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJulia Simon, Clément Ballot, Franck Fournel
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Abstract
A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.
Claims15
Method of manufacturing optoelectronic devices, comprising the following successive steps:
- a) forming, by epitaxial growth on a growth substrate, an active diode stack;
- b) transferring, onto a first transfer substrate, the active diode stack;
- c) removing the growth substrate;
- d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies;
- e) transferring, onto a second transfer substrate, the dies each comprising a portion of the active diode stack,
- f) removing portions of the first transfer substrate comprised in each die;
- and
- g) transferring the assembly comprising the second transfer substrate and the portions of the active diode stack onto an active substrate comprising integrated control circuits.
Dependencies are inferred from the claim text.