Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having a first surface and a second surface opposite to the first surface in a thickness direction;
• a protective film disposed above the first surface of the semiconductor substrate, the protective film defining an opening;
• a first main electrode disposed on the first surface of the semiconductor substrate, the first main electrode having an exposed portion exposed from the opening of the protective film to provide a bonding region;
• and
• a second main electrode disposed on the second surface of the semiconductor substrate, wherein
• the semiconductor substrate includes an active region formed with a plurality of IGBTs to each of which a diode is connected in antiparallel, as vertical elements that allow currents to flow between the first main electrode and the second electrode,
• the opening is disposed to correspond to the active region in the thickness direction,
• the active region includes an overlapping region that overlaps with the exposed portion of the first main electrode in the thickness direction, and a non-overlapping region that does not overlap with the exposed portion in the thickness direction, and
• a proportion of a diode-formed region in the non-overlapping region is higher than a proportion of a diode-formed region in the overlapping region.