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US 12,648,172 B2Granted
Transistor with metal field plate contact
AssigneeGlobalFoundries U.S. Inc.
InventorsShesh M. Pandey, Rajendran Krishnasamy, Judson R. Holt, Chung Foong Tan
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a transistor with a metal field plate contact and methods of manufacture. The structure includes: a gate structure on a semiconductor substrate; a shallow trench isolation structure within the semiconductor substrate; and a contact extending from the gate structure and into the shallow trench isolation structure.
Claims19
A structure comprising:
- a gate structure on a semiconductor substrate, the gate structure comprising a gate electrode over a first gate dielectric material and a second gate dielectric material, the second gate dielectric material being different than the first gate dielectric material and in contact with both the first gate dielectric material and the gate electrode;
- a shallow trench isolation structure within the semiconductor substrate;
- and
- a contact extending from the gate structure and into the shallow trench isolation structure, the contact comprising an interconnect contact, a wiring structure and a field plate, the interconnect contact and the field plate being on a same wiring level with and contacting the wiring structure, the interconnect contact extending from and contacting a top surface of the gate structure, and the field plate being positioned on a side of and remotely from the gate structure.
1 more element
A structure comprising:
- a semiconductor substrate;
- a shallow trench isolation structure within the semiconductor substrate;
- a gate structure extending partially over the shallow trench isolation structure, the gate structure comprising a gate electrode over a first gate dielectric material and a second gate dielectric material, the second gate dielectric material being different than the first gate dielectric material and in contact with both the first gate dielectric material and the gate electrode;
- a drain diffusion adjacent to the shallow trench isolation structure;
- and
- a contact electrically connected to a top surface of the gate electrode of the gate structure and extending within the shallow trench isolation structure between the drain diffusion and the gate structure, wherein the contact comprises a metal field plate with two interconnect structures extending into the shallow trench isolation structure, and wherein all portions of the metal field plate are remotely positioned from and not contacting the gate structure.
3 more elements
A method comprising:
- forming a gate structure on a semiconductor substrate, the gate structure comprising a gate electrode over a first gate dielectric material and a second gate dielectric material, the second gate dielectric material being different than the first gate dielectric material and in contact with both the first gate dielectric material and the gate electrode;
- forming a shallow trench isolation structure within the semiconductor substrate;
- and
- forming a contact extending from the gate structure and into the shallow trench isolation structure, the contact comprising an interconnect contact, a wiring structure and a field plate, the interconnect contact and the field plate being on a same wiring level with and contacting the wiring structure, the interconnect contact extending from and contacting a top surface of the gate structure, and the field plate being positioned on a side of and remotely from the gate structure.
1 more element
Dependencies are inferred from the claim text.