Memory arrays including continuous line-shaped random access memory strips and method forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Tzu Lin, Kuo-Chyuan Tzeng, Kao-Chao Lin, Chang-Chih Huang
Life of this patent
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Abstract
A device includes a first plurality of conductive strips have lengthwise directions in a first direction, a selector array overlapping the first plurality of conductive strips, an electrode array overlapping the selector array, a plurality of memory strips over the electrode array, and a second plurality of conductive strips overlapping the plurality of memory strips. The plurality of memory strips and the second plurality of conductive strips have lengthwise directions in a second direction perpendicular to the first direction.
Claims20
A device comprising:
- a first array of electrodes;
- a first plurality of memory strips, wherein at least one of the first plurality of memory strips overlaps a column of the first array of electrodes;
- a first plurality of conductive strips, each overlapping and contacting one of the first plurality of memory strips;
- a second array of electrodes overlapping the first plurality of conductive strips;
- a second plurality of memory strips over the second array of electrodes, wherein at least one of the second plurality of memory strips overlaps a respective row of the second array of electrodes;
- and
- a second plurality of conductive strips, each overlapping one of the second plurality of memory strips.
A device comprising:
- a first array of electrodes;
- a first plurality of memory strips, wherein at least one of the first plurality of memory strips overlaps a column of the first array of electrodes, wherein the first plurality of memory strips comprise state-storage elements of Conductive Bridging Random Access Memories (CBRAMs) or Phase-Change Random Access Memories (PCRAMs);
- a first plurality of conductive strips, each overlapping and contacting one of the first plurality of memory strips;
- a second array of electrodes overlapping the first plurality of conductive strips;
- a second plurality of memory strips over the second array of electrodes, wherein at least one of the second plurality of memory strips overlaps a respective row of the second array of electrodes;
- and
- a second plurality of conductive strips, each overlapping one of the second plurality of memory strips.
A device comprising:
- a first array of electrodes;
- a first plurality of memory strips, wherein at least one of the first plurality of memory strips overlaps a column of the first array of electrodes;
- a first plurality of conductive strips, each overlapping and contacting one of the first plurality of memory strips, wherein each of the first plurality of memory strips is a continuous strip formed of a same material, and the continuous strip crosses over and contacts a plurality of electrodes in the first array of electrodes;
- a second array of electrodes overlapping the first plurality of conductive strips;
- a second plurality of memory strips over the second array of electrodes, wherein at least one of the second plurality of memory strips overlaps a respective row of the second array of electrodes;
- and
- a second plurality of conductive strips, each overlapping one of the second plurality of memory strips.
Dependencies are inferred from the claim text.