Reconfigurable metasurfaces and x-band RF devices employing the acoustoelectric effect

Abstract

A reconfigurable metasurface device that leverages the interaction of phonon modes and a charge carrier distribution in a thin film semiconductor/piezoelectric film stack via the acoustoelectric interaction is disclosed. A surface acoustic wave (SAW) is launched into the piezoelectric layer. The SAW propagates through the piezoelectric layer, where the resulting strain wave induces a corresponding propagating electric field. This electric field capacitively couples to the thin film semiconductor, where it electrostatically induces periodic modulations of the charge carriers. The charge carrier distribution in the thin film semiconductor will form ribbons of charge carriers following the constant phase fronts of a sufficiently large amplitude SAW. By controlling the charge carrier patterning one can modulate the coupling to the plasmonic modes in the thin film semiconductor. By controlling the charge carrier patterning via the power and wavelength of the SAW, a reconfigurable metasurface results.

Dependencies are inferred from the claim text.