Bulk acoustic wave resonator and capacitor with silicon support

A filter including one or more acoustic wave devices, each acoustic wave device comprising:

• a substrate;
• and
• at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate, each of the resonator structures of the first and second types including a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being located between the first electrode and the second electrode, and the second electrode being located between the piezoelectric layer and the substrate,
• the resonator structures of the first type being configured to operate as capacitors and having a first thickness causing the resonator structures of the first type to have a first passband frequency range between a first resonant frequency, fs1, and a first anti-resonant frequency, fp1, and
• the resonator structures of the second type having a second thickness that is different from the first thickness, causing the resonator structures of the second type to have a second passband frequency range between a second resonant frequency, fs2, and a second anti-resonant frequency, fp2.

A radio-frequency module including a packaging substrate configured to receive a plurality of devices and a die mounted on the packaging substrate, the die including an acoustic wave device, the acoustic wave device comprising:

• a substrate;
• and
• at least one resonator structure of a first type and at least one resonator structure of a second type mounted on the substrate, each of the resonator structures of the first and second types having a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being located between the first electrode and the second electrode, and the second electrode being located between the piezoelectric layer and the substrate,
• the resonator structures of the first type being configured to operate as capacitors and having a first thickness causing the resonator structures of the first type to have a first passband frequency range between a first resonant frequency, fs1, and a first anti-resonant frequency, fp1, and
• the resonator structures of the second type having a second thickness that is different from the first thickness, causing the resonator structures of the second type to have a second passband frequency range between a second resonant frequency, fs2, and a second anti-resonant frequency, fp2.