RF amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections and integration into packaging

A transistor device package, comprising:

• a component assembly comprising an interconnect structure and a transistor die having a front surface including a gate terminal, a drain terminal, and a source terminal on a first surface of the interconnect structure, wherein the transistor die is mounted on the first surface of the interconnect structure with the front surface including the gate terminal, the drain terminal, and the source terminal facing the first surface of the interconnect structure;
• and
• respective patterns of a conductive adhesive on the first surface of the interconnect structure, wherein at least one of the respective patterns of the conductive adhesive provides an input, output, or ground signal path for the transistor device package.

A method of fabricating a transistor device package, the method comprising:

• providing a component assembly comprising an interconnect structure, a transistor die having a front surface including a gate terminal, a drain terminal, and a source terminal on a first surface of the interconnect structure, and one or more passive electrical components electrically coupled to the gate, drain, and/or source terminal by the interconnect structure, wherein the transistor die is mounted on the first surface of the interconnect structure with the front surface including the gate terminal, the drain terminal, and the source terminal facing the first surface of the interconnect structure;
• and
• attaching a back surface of the transistor die, which is opposite the front surface, to a thermally conductive flange by a conductive adhesive.