Voltage controlled oscillator and method

A voltage-controlled oscillator (VCO) comprising:

• a power supply source;
• a voltage source;
• a reference voltage node;
• first and second transistors, each comprising a source terminal coupled to the reference voltage node;
• and
• first through fourth conductive structures,
• wherein
• the first conductive structure comprises:
• a first terminal coupled to the power supply source;
• a first extending portion coupled between the first terminal and a drain terminal of the first transistor;
• and
• a second extending portion coupled between the first terminal and a drain terminal of the second transistor,
• the second conductive structure comprises:
• a second terminal coupled to the voltage source;
• a third extending portion coupled in series with the third conductive structure between the second terminal and a gate of the first transistor;
• and
• a fourth extending portion coupled in series with the fourth conductive structure between the second terminal and a gate of the second transistor,
• the first extending portion is positioned between the fourth extending portion and the third conductive structure, and
• the second extending portion is positioned between the third extending portion and the fourth conductive structure.

A method of operating a voltage-controlled oscillator (VCO), the method comprising:

• receiving a reference voltage at a source terminal of each of a first transistor and a second transistor;
• receiving a power supply voltage at a first terminal of a first conductive structure, wherein the first conductive structure comprises:
• a first extending portion coupled between the first terminal and a drain terminal of the first transistor;
• and
• a second extending portion coupled between the first terminal and a drain terminal of the second transistor;
• and
• receiving an input voltage at a second terminal of a second conductive structure, wherein the second conductive structure comprises:
• a third extending portion coupled in series with a third conductive structure between the second terminal and a gate of the first transistor;
• and
• a fourth extending portion coupled in series with a fourth conductive structure between the second terminal and a gate of the second transistor.