Dry chamber clean of photoresist films

A method of cleaning a deposition chamber, the method comprising:

• introducing an etch gas into the deposition chamber, wherein the etch gas cleans the one or more internal surfaces of the deposition chamber in a thermal plasma-free process by removing a first thickness of an unexposed organo-metal oxide-containing EUV photoresist material formed on the one or more internal surfaces of the deposition chamber during deposition processes on one or more semiconductor substrates;
• and
• exposing the one or more internal surfaces of the deposition chamber to plasma to remove one or more of residual carbon, contaminants, byproducts of the etch gas from thermal plasma-free process, and a remaining thickness of the unexposed organo-metal oxide-containing EUV photoresist material.