US 12,646,580 B2 · Methods of operating magnetic memory devices

Abstract

A method of operating a magnetic memory device includes: (i) applying a first current to a free layer of a magnetic tunnel junction structure, which includes a magnetic translation unit (MTU) extending between a first magnetic pad and a second magnetic pad, and a tunnel barrier layer and a pinned layer stacked on the MTU, so that a multi-domain is established within the MTU, (ii) applying a magnetic field to the free layer so that the magnetization direction of the MTU switches to become anti-parallel to the magnetization directions of the first magnetic pad and the second magnetic pad, (iii) applying a second current to the free layer so that a portion of the multi-domain penetrates into the first magnetic pad, and (iv) applying another magnetic field to the free layer so that the magnetization direction of the first magnetic pad switches.

Claims20

Dependent claims

A method of operating a magnetic memory device, the method comprising:

applying a first magnetic field to a magnetic track layer (MTL), which includes a first magnetic fixed unit, a second magnetic fixed unit, and a magnetic translation unit (MTU) extending between the first magnetic fixed unit and the second magnetic fixed unit in a first direction, so that the first magnetic fixed unit, the second magnetic fixed unit, and the MTU have magnetization directions that are parallel to each other;
applying a first current to the MTL so that a multi-domain is established within the MTU;
applying a second magnetic field to the MTL so that the magnetization direction of the MTU switches to become anti-parallel to the magnetization directions of the first magnetic fixed unit and the second magnetic fixed unit;
applying a second current to the MTL so that a portion of the multi-domain penetrates into the first magnetic fixed unit;
and
applying a third magnetic field to the MTL so that the magnetization direction of the first magnetic fixed unit switches to become anti-parallel to the magnetization direction of the second magnetic fixed unit.

3 more elements

An operating method of a magnetic memory device for fixing a magnetization direction of a first magnetic pad and a magnetization direction of a second magnetic pad to an anti-parallel state with respect to each other, the operating method comprising:

preparing a magnetic tunnel junction structure including a free layer where a magnetic translation unit is disposed between the first magnetic pad and the second magnetic pad in a horizontal direction and a tunnel barrier layer and a pinned layer each disposed on the magnetic translation unit in a vertical direction;
applying a first magnetic field to the free layer so that the first magnetic pad, the second magnetic pad, and the magnetic translation unit have magnetization directions parallel to one another;
applying a first current to the free layer so that a multi-domain is formed in the magnetic translation unit;
applying a second magnetic field to the free layer so that a magnetization direction of the magnetic translation unit is anti-parallel to magnetization directions of the first magnetic pad and the second magnetic pad;
applying a second current to the free layer so that a portion of the multi-domain penetrates into the first magnetic pad;
and
applying a third magnetic field to the free layer so that the magnetization direction of the first magnetic pad is anti-parallel to the magnetization direction of the second magnetic pad.

4 more elements

A method of operating a magnetic memory device, the method comprising:

in a magnetic tunnel junction structure including a stack structure of a free layer, a tunnel barrier layer, and a pinned layer, the free layer comprising a first magnetic pad, a second magnetic pad, and a magnetic translation unit disposed between the first magnetic pad and the second magnetic pad in a horizontal direction,
applying a magnetic field pulse to the free layer three times and applying a current pulse to the free layer twice for fixing a magnetization direction of the first magnetic pad and a magnetization direction of the second magnetic pad to be in an anti-parallel state with respect to each other.

Dependencies are inferred from the claim text.

Methods of operating magnetic memory devices

Life of this patent

Methods of operating magnetic memory devices

Life of this patent

Abstract

Claims20