Lithography system and methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEng Hock Lee, Wen-Hao Cheng
Life of this patent
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Abstract
A lithography exposure system includes a light source, a substrate stage, and a mask stage between the light source and the substrate stage along an optical path from the light source to the substrate stage. The lithography exposure system further comprises a reflector along the optical path. The reflector comprises: a first layer having a first material and a first thickness; a second layer having the first material and a second thickness different from the first thickness; and a third layer between the first layer and the second layer, and having a second material different from the first material.
Claims20
A method of forming a reflective multilayer, the method comprising:
- forming a first material layer having a first material and a first thickness;
- forming a second material layer on the first material layer, the second material layer having a second material and a second thickness different from the first thickness;
- forming a third material layer on the second material layer, the third material layer having the first material and a third thickness different from the first thickness;
- forming a fourth material layer on the third material layer, the fourth material layer having a third material;
- and
- forming a fifth material layer on the fourth material layer, the fifth material layer having a fourth material;
- wherein the first material, the second material, the third material and the fourth material are different from each other, and each of the first material, the second material, the third material and the fourth material has an extinction coefficient less than or equal to that of ruthenium.
A method of forming a reflective multilayer, the method comprising:
- forming a first material layer including silicon of a first thickness;
- forming a second material layer on the first material layer, the second material layer including molybdenum;
- forming a third material layer on the second material layer, the third material layer including silicon of a second thickness different from the first thickness;
- forming a fourth material layer on the third material layer, the fourth material layer including ruthenium;
- and
- forming a fifth material layer on the fourth material layer, the fifth material layer including strontium or beryllium.
A method of forming a reflective multilayer, the method comprising:
- forming a first material layer having a first material;
- forming a second material layer on the first material layer, the second material layer having a second material;
- forming a third material layer on the second material layer;
- forming a fourth material layer on the third material layer, the fourth material layer having a third material;
- and
- forming a fifth material layer on the fourth material layer, the fifth material layer having a fourth material;
- wherein the first material, the second material, the third material and the fourth material are different from each other, and each of the first material, the second material, the third material and the fourth material has an extinction coefficient less than or equal to 0.02.
Dependencies are inferred from the claim text.