Apparatus and methods for beam processing of substrates
AssigneeTokyo Electron Limited
InventorMirko Vukovic
Life of this patent
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Abstract
A substrate processing system includes a processing chamber, a substrate holder configured to hold and rotate a substrate about an axis perpendicular to a working surface of the substrate; an electron emitter adapted to emit a first electron beam directed at a first surface of a peripheral region of the substrate, the first electron beam having a first beam energy and a first beam current sufficient to vaporize material from the first surface of the peripheral region of the substrate; an airflow system configured to direct a flow of gas across the working surface of the substrate; and an exhaust system configured to collect the gas comprising the material vaporized from the peripheral region.
Claims20
A substrate processing system comprising:
- a processing chamber;
- a substrate holder disposed in the processing chamber, the substrate holder configured to hold and rotate a substrate about an axis perpendicular to a working surface of the substrate;
- an electron emitter configured to vaporize material from a region of the substrate;
- and
- an airflow system configured to entrain the material vaporized from the region with a flow of gas.
A substrate processing system comprising:
- a processing chamber;
- a substrate holder disposed in the processing chamber, the substrate holder configured to hold a substrate;
- an electron beam emitter configured to emit an electron beam targeted at a peripheral region of the substrate;
- an airflow system configured to supply a gas over the substrate;
- and
- a vacuum system configured to remove a gas comprising material vaporized from the peripheral region by the electron beam.
A substrate processing system comprising:
- a processing chamber;
- a substrate holder disposed in the processing chamber, the substrate holder configured to hold and rotate a substrate about an axis perpendicular to a working surface of the substrate;
- an electron emitter adapted to emit a first electron beam directed at a first surface of a peripheral region of the substrate, the first electron beam having a first beam energy and a first beam current sufficient to vaporize material from the first surface of the peripheral region of the substrate;
- an airflow system configured to direct a flow of gas across the working surface of the substrate;
- and
- an exhaust system configured to collect the gas comprising the material vaporized from the peripheral region.
Dependencies are inferred from the claim text.