Semiconductor photoresist composition and method of forming patterns using the composition

A photoresist composition, comprising

• a first organometallic compound represented by Chemical Formula 1;
• a second organometallic compound represented by Chemical Formula 2;
• and
• a solvent:
• wherein, in Chemical Formula 1 and Chemical Formula 2,
• R1 and R2 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C3 to C20 cycloalkynyl group, a substituted or unsubstituted C1 to C20 alkoxy group, or a combination thereof,
• L1 and L2 are each independently a single bond, a substituted or unsubstituted C1 to C20 alkylene group, a substituted or unsubstituted C2 to C20 alkenylene group, a substituted or unsubstituted C2 to C20 alkynylene group, or a combination thereof,
• at least one selected from among R1 and L1 comprises a tertiary carbon,
• at least one selected from among R2 and L2 comprises at least one selected from among a primary carbon and a secondary carbon,
• X1, X2, Y1, Y2, Z1, and Z2 are each independently —ORa, —SRb, —OC(═O)Rc, or —SC(═O)Rd,
• Ra and Rb are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and
• Rc and Rd are each independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof.